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1. product pro?le 1.1 general description 120 w ldmos power transistor intended for radar applications in the 2.7 ghz to 3.1 ghz range. 1.2 features n typical pulsed rf performance at a frequency of 2.7 ghz to 3.1 ghz, a supply voltage of 32 v, an i dq of 100 ma, a t p of 100 m s with d of 10 %: u output power = 120 w u power gain = 13.5 db u ef?ciency = 48 % n easy power control n integrated esd protection n high ?exibility with respect to pulse formats n excellent ruggedness n high ef?ciency n excellent thermal stability n designed for broadband operation (2.7 ghz to 3.1 ghz) n internally matched for ease of use n compliant to directive 2002/95/ec, regarding restriction of hazardous substances (rohs) bls6g2731-120; BLS6G2731S-120 ldmos s-band radar power transistor rev. 01 14 november 2008 product data sheet table 1. typical performance typical rf performance at t case =25 c; t p = 100 m s; d = 10 %; i dq = 100 ma; in a class-ab production test circuit. mode of operation f v ds p l g p h d t r t f (ghz) (v) (w) (db) (%) (ns) (ns) pulsed rf 2.7 to 3.1 32 120 13.5 48 20 6 caution this device is sensitive to electrostatic discharge (esd). therefore care should be taken during transport and handling.
bls6g2731-120_6g2731s-120_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 14 november 2008 2 of 12 nxp semiconductors bls6g2731-120; BLS6G2731S-120 ldmos s-band radar power transistor 1.3 applications n s-band power ampli?ers for radar applications in the 2.7 ghz to 3.1 ghz frequency range 2. pinning information [1] connected to ?ange. 3. ordering information 4. limiting values table 2. pinning pin description simpli?ed outline graphic symbol bls6g2731-120 (sot502a) 1 drain 2 gate 3 source [1] BLS6G2731S-120 (sot502b) 1 drain 2 gate 3 source [1] 3 2 1 sym112 1 3 2 3 2 1 sym112 1 3 2 table 3. ordering information type number package name description version bls6g2731-120 - ?anged ldmost ceramic package; 2 mounting holes; 2 leads sot502a BLS6G2731S-120 - earless ?anged ldmost ceramic package; 2 leads sot502b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter min max unit v ds drain-source voltage - 60 v v gs gate-source voltage - 0.5 +13 v i d drain current - 33 a t stg storage temperature - 65 +150 c t j junction temperature - 225 c
bls6g2731-120_6g2731s-120_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 14 november 2008 3 of 12 nxp semiconductors bls6g2731-120; BLS6G2731S-120 ldmos s-band radar power transistor 5. thermal characteristics 6. characteristics 7. application information table 5. thermal characteristics symbol parameter conditions typ unit z th(j-mb) transient thermal impedance from junction to mounting base t case =85 c; p l = 120 w t p = 100 m s; d = 10 % 0.23 k/w t p = 200 m s; d = 10 % 0.28 k/w t p = 300 m s; d = 10 % 0.32 k/w t p = 100 m s; d = 20 % 0.33 k/w table 6. characteristics t j =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d = 0.6 ma 60 - - v v gs(th) gate-source threshold voltage v ds = 10 v; i d = 180 ma 1.4 1.8 2.4 v i dss drain leakage current v gs =0v; v ds =28v - - 4.2 m a i dsx drain cut-off current v gs =v gs(th) + 3.75 v; v ds =10v 27 33 - a i gss gate leakage current v gs =11v; v ds = 0 v - - 450 na g fs forward transconductance v ds = 10 v; i d = 9 a 8.1 13 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d = 6.3 a - 0.085 0.135 w table 7. application information mode of operation: pulsed rf; t p = 100 m s; d = 10 %; rf performance at v ds =32v;i dq = 100 ma; t case =25 c; unless otherwise speci?ed, in a class-ab production circuit. symbol parameter conditions min typ max unit p l output power - 120 - w v cc supply voltage p l = 120 w - - 32 v g p power gain p l = 120 w 12 13.5 - db rl in input return loss p l = 120 w - 7 - db p l(1db) output power at 1 db gain compression - 130 - w h d drain ef?ciency p l = 120 w 40 48 - % p droop(pulse) pulse droop power p l = 120 w - 0 0.5 db t r rise time p l = 120 w - 20 50 ns t f fall time p l = 120 w - 6 50 ns
bls6g2731-120_6g2731s-120_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 14 november 2008 4 of 12 nxp semiconductors bls6g2731-120; BLS6G2731S-120 ldmos s-band radar power transistor 7.1 ruggedness in class-ab operation the bls6g2731-120 and BLS6G2731S-120 are capable of withstanding a load mismatch corresponding to vswr =5:1 through all phases under the following conditions: v ds = 32 v; i dq = 100 ma; p l = 120 w; t p = 100 m s; d = 10 %. table 8. typical impedance f z s z l ghz w w 2.7 3.4 - j7.2 4.6 - j4.4 2.8 3.8 - j5.9 3.8 - j4.6 2.9 4.7 - j4.8 3.0 - j4.6 3.0 6.3 - j4.1 2.3 - j4.3 3.1 8.8 - j4.9 1.8 - j3.9 fig 1. de?nition of transistor impedance 001aaf059 drain z l z s gate
bls6g2731-120_6g2731s-120_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 14 november 2008 5 of 12 nxp semiconductors bls6g2731-120; BLS6G2731S-120 ldmos s-band radar power transistor 7.2 graphs v ds =32v; i dq = 100 ma; t p = 300 m s; d = 10 %. (1) f = 2.7 ghz (2) f = 2.9 ghz (3) f = 3.1 ghz v ds = 32 v; i dq = 100 ma; t p = 100 m s; d = 20 %. (1) f = 2.7 ghz (2) f = 2.9 ghz (3) f = 3.1 ghz fig 2. power gain as a function of load power; typical values fig 3. power gain as a function of load power; typical values v ds =32v; i dq = 100 ma; t p = 300 m s; d = 10 %. (1) f = 2.7 ghz (2) f = 2.9 ghz (3) f = 3.1 ghz v ds = 32 v; i dq = 100 ma; t p = 100 m s; d = 20 %. (1) f = 2.7 ghz (2) f = 2.9 ghz (3) f = 3.1 ghz fig 4. drain ef?ciency as a function of load power; typical values fig 5. drain ef?ciency as a function of load power; typical values p l (w) 0 160 120 40 80 001aaj091 11 9 13 15 g p (db) 7 (1) (3) (2) p l (w) 0 160 120 40 80 001aaj092 11 9 13 15 g p (db) 7 (1) (3) (2) p l (w) 0 160 120 40 80 001aaj093 20 40 60 h d (%) 0 (1) (2) (3) p l (w) 0 160 120 40 80 001aaj094 20 40 60 h d (%) 0 (1) (2) (3)
bls6g2731-120_6g2731s-120_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 14 november 2008 6 of 12 nxp semiconductors bls6g2731-120; BLS6G2731S-120 ldmos s-band radar power transistor v ds =32v; i dq = 100 ma; t p = 300 m s; d = 10 %. (1) f = 2.7 ghz (2) f = 2.9 ghz (3) f = 3.1 ghz v ds = 32 v; i dq = 100 ma; t p = 100 m s; d = 20 %. (1) f = 2.7 ghz (2) f = 2.9 ghz (3) f = 3.1 ghz fig 6. load power as a function of input power; typical values fig 7. load power as a function of input power; typical values p l = 120 w; v ds =32v; i dq = 100 ma; t p = 300 m s; d =10%. p l = 120 w; v ds =32v; i dq = 100 ma; t p = 100 m s; d =20%. fig 8. power gain and drain ef?ciency as function of frequency; typical values fig 9. power gain and drain ef?ciency as function of frequency; typical values 001aaj095 p i (w) 012 8 4 80 40 120 160 p l (w) 0 (1) (3) (2) 001aaj096 p i (w) 012 8 4 80 40 120 160 p l (w) 0 (1) (3) (2) f (ghz) 2.65 3.15 3.05 2.85 2.95 2.75 001aaj097 11 13 15 g p (db) 9 40 50 60 h d (%) 30 g p h d f (ghz) 2.65 3.15 3.05 2.85 2.95 2.75 001aaj098 11 13 15 g p (db) 9 40 50 60 h d (%) 30 g p h d
bls6g2731-120_6g2731s-120_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 14 november 2008 7 of 12 nxp semiconductors bls6g2731-120; BLS6G2731S-120 ldmos s-band radar power transistor 8. test information striplines are on a double copper-clad duroid 6006 printed-circuit board (pcb) with e r = 6.15 and thickness = 0.64 mm. see t ab le 9 for list of components. fig 10. component layout for 2700 mhz to 3100 mhz test circuit 001aaj099 c8 c7 c6 c5 c4 r1 c1 c3 c9 c10 c12 c13 c2 c11 rev3 table 9. list of components see figure 10 . component description value remarks c1, c2 multilayer ceramic chip capacitor 24 pf atc 100a or equivalent c3 multilayer ceramic chip capacitor 47 m f; 20 v c4, c6, c9, c10 multilayer ceramic chip capacitor 33 pf atc 100a or equivalent c5, c11 multilayer ceramic chip capacitor 1 nf atc 100a or equivalent c7, c8 multilayer ceramic chip capacitor 100 pf atc 100b or equivalent c12 electrolytic capacitor 47 m f; 63 v c13 multilayer ceramic chip capacitor 10 m f; 35 v r1 smd resistor 56 w smd 0603
bls6g2731-120_6g2731s-120_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 14 november 2008 8 of 12 nxp semiconductors bls6g2731-120; BLS6G2731S-120 ldmos s-band radar power transistor 9. package outline fig 11. package outline sot502a references outline version european projection issue date iec jedec jeita sot502a 99-12-28 03-01-10 0 5 10 mm scale flanged ldmost ceramic package; 2 mounting holes; 2 leads sot502a p l a f b d u 2 h q c 1 3 2 d 1 e a c q u 1 c b e 1 m m w 2 unit a mm d b 12.83 12.57 0.15 0.08 20.02 19.61 9.53 9.25 19.94 18.92 9.91 9.65 4.72 3.43 c u 2 0.25 0.51 27.94 qw 2 w 1 f 1.14 0.89 u 1 34.16 33.91 l 5.33 4.32 p 3.38 3.12 q 1.70 1.45 ee 1 9.50 9.30 inches 0.505 0.495 0.006 0.003 0.788 0.772 d 1 19.96 19.66 0.786 0.774 0.375 0.364 0.785 0.745 0.390 0.380 0.186 0.135 0.01 0.02 1.100 0.045 0.035 1.345 1.335 0.210 0.170 0.133 0.123 0.067 0.057 0.374 0.366 h dimensions (millimetre dimensions are derived from the original inch dimensions) w 1 ab m m m
bls6g2731-120_6g2731s-120_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 14 november 2008 9 of 12 nxp semiconductors bls6g2731-120; BLS6G2731S-120 ldmos s-band radar power transistor fig 12. package outline sot502b references outline version european projection issue date iec jedec jeita sot502b 03-01-10 07-05-09 0 5 10 mm scale earless flanged ldmost ceramic package; 2 leads sot502b a f b d u 2 l h q c 1 3 2 d 1 e d u 1 d e 1 m m w 2 unit a mm d b 12.83 12.57 0.15 0.08 20.02 19.61 9.53 9.25 19.94 18.92 9.91 9.65 4.72 3.43 c u 2 0.25 w 2 f 1.14 0.89 u 1 20.70 20.45 l 5.33 4.32 q 1.70 1.45 ee 1 9.50 9.30 inches 0.505 0.495 0.006 0.003 0.788 0.772 d 1 19.96 19.66 0.786 0.774 0.375 0.364 0.785 0.745 0.390 0.380 0.186 0.135 0.010 0.045 0.035 0.815 0.805 0.210 0.170 0.067 0.057 0.374 0.366 h dimensions (millimetre dimensions are derived from the original inch dimensions)
bls6g2731-120_6g2731s-120_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 14 november 2008 10 of 12 nxp semiconductors bls6g2731-120; BLS6G2731S-120 ldmos s-band radar power transistor 10. abbreviations 11. revision history table 10. abbreviations acronym description ldmos laterally diffused metal-oxide semiconductor ldmost laterally diffused metal-oxide semiconductor transistor rf radio frequency s-band short wave band vswr voltage standing-wave ratio table 11. revision history document id release date data sheet status change notice supersedes bls6g2731-120_6g2731s-120_1 20081114 product data sheet - -
bls6g2731-120_6g2731s-120_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 14 november 2008 11 of 12 nxp semiconductors bls6g2731-120; BLS6G2731S-120 ldmos s-band radar power transistor 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 12.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 12.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www .nxp.com for sales of?ce addresses, please send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors bls6g2731-120; BLS6G2731S-120 ldmos s-band radar power transistor ? nxp b.v. 2008. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 14 november 2008 document identifier: bls6g2731-120_6g2731s-120_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 14. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics. . . . . . . . . . . . . . . . . . . 3 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 application information. . . . . . . . . . . . . . . . . . . 3 7.1 ruggedness in class-ab operation. . . . . . . . . . 4 7.2 graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 10 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 11 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 12.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13 contact information. . . . . . . . . . . . . . . . . . . . . 11 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

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